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Low Power CMOS VLSI: Circuit Design Kaushik Roy, Sharat Prasad
Publisher: Wiley

To 5:30 p.m., just after the Japan Society for the Promotion of Science (JSPS) Symposium on low-voltage devices and circuits (which is being held during the same week as the VLSI Symposia). The SOI Consortium's FD-SOI Workshop The Consortium event will run from 3 p.m. Novel design techniques (e.g., multi-valued logic) have been proposed as possible supplements to the more traditional CMOS design style. It focuses on many CMOS design issues like interconnect, clocking, and circuits. A rigorous numerical study on the role of variations in CNT arrays show all the metallic tubes are necessary for realizing practical CNFETs. Finally, tunneling CNFETs have also been investigated and shown to hold enormous promise for ultralow power VLSI design, both as computational elements and also for power gating in Si based systems. It covers a number of VLSI design topics and explains the fundamental principles of CMOS VLSI design techniques. The IEEE Symposia on VLSI Technology and Circuits, from June 12 to 15 in Honolulu, Hawaii will have several in depth tracks focusing on ReRam and memristor memristors. Leakage current in a CMOS design strongly depends on the input-data vector, and engineers have used this property to reduce leakage-power dissipation during circuits' standby periods (references 5, 6, and 7). VLSI Technology Short Course (June 11) -- “14nm CMOS Technology & Design Co-Optimization and Emerging Memory Technologies” -- This course will comprise six lectures given by distinguished speakers, covering state-of-the-art technology and circuit design for The second Circuits Short Course, “Ultra Low Power SoC Design for Future Mobile Systems,” will cover the technical requirements needed to successfully realize next-generation mobile systems. Tagged with 14nm, 28nm, conference, design, FD-SOI, FinFET, foundry, GlobalFoundries, IBM, IP, Leti, low-power, SEH, silicon-on-insulator, SOC, ST, VeriSilicon.